Peng Yang attended the virtual Energy Conversion Congress & Exposition (ECCE), organised by the Institute of Electrical & Electronics Engineers (IEEE). It was a virtual conference, so he pre-recorded his presentation based on his published paper, A Step-by-step Modelling Approach for SiC Half-bridge Modules Considering Temperature Characteristics. His presentation details a modelling method for silicon carbide (SiC) MOSFET half-bridge modules. The curve-fitting method was used to model the nonlinear characteristics of SiC MOSFETs. The model was then validated by experimental results. Watch his explanation below:
